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The application of a higher electric field creates a nonuniform distribution of the electric field in the crystal, favoring the emission of the charge carriers. This vacancy is a very effective charge-trapping center. This vacancy can be considered a defect of the perovskite structure of the undoped Bi4O3. The most important defect in this solid solution is a oxygen vacancy. The solid solution formed by doped Bi4O3 and Nd:YAG in annealed crystals is Bi2O3-Nd2O3-SeO2. The crystal has a rhombohedral structure, space group R3c, with lattice constants: a = 0.3515 nm, c = 0.4537 nm. The whole crystal is grown from a melt of bismuth, oxide of bismuth, and selenium. The bismuth oxy-nitride crystal is doped with selenium and Nd:YAG. We present the fabrication of a solid-state laser and the use of bismuth oxy-nitride as a gain medium. .The bismuth oxy-nitride crystal is grown in a reactor and a radial-polarization prism is used to generate the laser. .We report the characterization of the laser via the second-harmonic generation of the .Īdditional information. Event Information: This course is aimed at optical network designers, engineers, and technical staff who require an understanding of the optical .īismuth Oxy-nitride: Solid-state lasers and interferometric characterizations of a monolith.
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